PART |
Description |
Maker |
SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03 |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL
|
INFINEON[Infineon Technologies AG]
|
SPB70N10L SPI70N10L SPP70N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=16mOhm, 70A, LL SIPMOS Power-Transistor Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=16mOhm, 70A, LL
|
INFINEON[Infineon Technologies AG]
|
AM2317P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
AM2310N |
Low rDS(on) Provides Higher Efficiency
|
TY Semiconductor Co., Ltd
|
MSQ7434N |
Low rDS(on) provides higher efficiency and
|
Bruckewell Technology L...
|
AM1331P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
MP5077 |
5.5V, 7A, Low RDSON Load Switch With Programmable Current Limit
|
Monolithic Power System...
|
AM3829P |
Low rDS(on) provides higher efficiency and extends battery life
|
TY Semiconductor Co., Ltd
|
MMBF2201NT1G |
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., L...
|
ADP194ACBZ-R7 ADP194CB-EVALZ |
Logic Controlled, High-Side Power Switch Low RDSON of 80 mΩ at 1.8 V
|
Analog Devices
|
BSS84P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-23, RDSon = 8
|
Infineon
|
SPB21N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=85mOhm, 21A, NL
|
Infineon
|